ace 2304b n - channel enhancement mode mosfet ver 1.2 1 description the ACE2304Bbm+ uses advanced trench technology to provide excellent r ds(on) and low gate ch arge. this device is suitable for use as a load switch or in pwm applications. features ? 30 v /5a ? r ds(on) =26 m (typ.) @ v gs =10v ? r ds(on) = 37 m (typ.) @ v gs =4.5v absolute maximum ratings parameter symbol max unit drain - source voltage v dss 3 0 v gate - source voltage v gss 20 v drain current ( continuous ) t a =25 i d 5 a t a = 70 4.1 drain current ( pulsed ) i d m 20 a power dissipation t a =25 p d 1.4 w t a = 70 1 operating temperature / storage temperature t j /t stg - 55~150 packaging type sot - 23 - 3 l 3 1 2 sot - 23 - 3 l description fun c tion 1 g gate 2 s source 3 d drain
ace 2304b n - channel enhancement mode mosfet ver 1.2 2 ordering i nformation ace 2304 b x x + h electrical characteristics t a =25 , unless otherwise specified. parameter symbol test conditions min typ max unit static drain - source breakdown voltage v (br)dss v gs =0v, i d =250a 30 34 v zero gate voltage drain current i dss v ds =2 4v, v gs =0v 1 a gate threshold voltage v gs(th) v gs =v ds , i ds =250a 1 1.4 2 v gate leakage current i gss v gs =20v, v ds =0v 100 na drain - source on - state resistance r ds(on) v gs =10v, i d =5.8a 26 31.5 m v gs =4.5v, i d =5a 37 44 m forward transconductanc e g fs v ds =5v, i d =5a 15 s diode forward voltage v sd i sd =1a, v gs =0v 0.77 1.0 v maximum body - diode continuous current i s 3 a switching total gate charge qg v gs =10v, v ds =15v, i d =5a 7.6 9.9 nc gate - source charge qgs 1.3 1.7 nc gate - drain ch arge qgd 1.7 2.2 nc turn - on delay time t d(on) v gs =10v, v dd =15v, i d =1a r l =15 , r g =6 10.1 20.3 ns turn - on rise time tr 3.2 6.3 ns turn - off delay time t d(off) 22.2 44.4 ns turn - off fall time tf 3 6 ns dynamic input capacitance ciss v gs =0v, v ds =15v, f=1.0mhz 391 pf output capacitance coss 86.2 pf reverse tra nsfer capacitance crss 59.4 pf gate resistance rg v gs =0v, v ds =0v, f=1mhz 1.4 2 b m : sot - 23 - 3 l pb - free halogen - free
ace 2304b n - channel enhancement mode mosfet ver 1.2 3 typical performance characteristics
ace 2304b n - channel enhancement mode mosfet ver 1.2 4 packing information so t - 23 - 3 l
ace 2304b n - channel enhancement mode mosfet ver 1.2 5 notes ace does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ace el ectronics co., ltd. as sued herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instru ctions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the fai lure of the life support device or system, or to affect its safety or effectiveness. ace technology co., ltd. http://www.ace - ele.com/
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